〈SMALL-SIGNAL DIODE〉

RT3DAAM

FOR HIGH SPEED SWITCHING APPLICATION

SILICON EPITAXIAL TYPE(ANODE COMMON)

ISAHAYA ELECTRONICS CORPORATION

PRELIMINARY

Notice：This is not a final specification

Some parametric are subject to change.

DESCRIPTION

RT3DAAM is a super mini package plastic seal type silicon epitaxial

type composite diode, built with two Anode common MC2836.

Due to the small pin capacitance, short switching time(reverse

recovery time),It is most suitable for high speed switching application

and limitter,clipper application.

FEATURE

●Small pin capacitance

●Quick switching time

●High voltage

●Quadruple diodes and super mini package for mounting

APPLICATION

For general high speed switching of audio machine,VTR.

OUTLINEDRAWING

Unit：ｍｍ

MAXIMUM RATINGS（Ta=25℃）（All Di COMMON）

Symbol

Parameter

Ratings

Unit

V

RM

Peak reverse voltage

85

V

V

R

DC reverse voltage

80

V

I

FSM

Surge current（1μs）

4

A

I

FM

Peak forward current

300

mA

I

O

Average rectification current

100

mA

P

T

Total allowance dissipation

200

mW

T

ｊ

Junction temperature

＋150

℃

Tstg

Storage temperature

-55～＋150

℃

ELECTRICAL CHARACTERISTICS（Ta=25℃）（All Di COMMON）

Parameter

Symbol

Test conditions

Limits

Uniit

Min

Typ

Max

Forward voltage

V

F1

I

-

0.77

0.9

V

V

F2

I

-

090

1.0

V

F3

I

-

0.95

1.2

Reverse current

I

R1

V

-

-

0.1

μA

I

R2

V

-

-

0.5

Pin capacitance

C

ｔ

-

2.8

4.0

pF

Reverse recovery time

trr

(Refer to test circuit)

-

－

4.0

ns

MARKING

DAA

●

①

②

③

⑥

⑤

④

Type Name

JEITA：SC-88

JEDEC：－

Equivalent circuit

MC2836

MC2836