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RT3PRRM 数据表(PDF) 2 Page - Isahaya Electronics Corporation |
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RT3PRRM 数据表(HTML) 2 Page - Isahaya Electronics Corporation |
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2 / 3 page ![]() PRELIMINARY RT3PRRM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ISAHAYA ELECTRONICS CORPORATION ELECTRICAL CHARACTERISTICS (Ta=25℃) (RTr1, RTr2) Limits Symbol Parameter Test conditions Min Typ Max Unit V(BR)CEO Collector to Emitter break down voltage IC=-100μA,RBE=∞ -50 - - V ICBO Collector cut off current VCB =-50V,IE=0 - - -0.1 μ A hFE DC forward current gain VCE=-5V,IC=-1mA 100 - - - VCE(sat) Collector to Emitter saturation voltage IC=-10mA,IB=-0.5mA - - -0.3 V R1 Input resistor - 33 47 61 kΩ fT Gain band width product VCE=-6V,IE=10mA - 150 - MHZ TYPICAL CHARACTERISTICS (RTr1,RTr2) DC FORWARD CURRENT GAIN VS COLLECTOR CURRENT 1 10 100 1000 -0.1 -1 -10 -100 COLLECTOR CURRENT IC(mA) VCE=-5V INPUT ON VOLTAGE VS COLLECTR CURRENT -0.1 -1 -10 -1 -10 -100 COLLECTOR CURRENT IC(mA) VCE=-0.2V COLLECTOR CURRENT VS INPUT OFF VOLTAGE -10 -100 -1000 -0.0 -0.5 -1.0 -1.5 -2.0 INPUT OFF VOLTAGE VI(off) (V) VCE=-5V |
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