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RT3T77M 数据表(PDF) 2 Page - Isahaya Electronics Corporation |
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RT3T77M 数据表(HTML) 2 Page - Isahaya Electronics Corporation |
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2 / 4 page ![]() PRELIMINARY RT3T77M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ISAHAYA ELECTRONICS CORPORATION TYPICAL CHARACTERISTICS (RTr1_NPN) ELECTRICAL CHARACTERISTICS (Ta=25℃) (RTr1_NPN, RTr2_PNP) Limits Symbol Parameter Test conditions Min Typ Max Unit V(BR)CEO Collector to Emitter break down voltage IC=100μA,RBE=∞ 50 - - V ICBO Collector cut off current VCB =50V,IE=0 - - 0.1 μ A hFE DC forward current gain VCE=5V,IC=1mA 100 - - - VCE(sat) Collector to Emitter saturation voltage IC=10mA,IB=0.5mA - 0.1 0.3 V R1 Input resistor - 7.0 10 13 kΩ RTr1 - 200 - fT Gain band width product VCE=6V,IE=10mA RTr2 - 150 - MHZ ※ PNP built in transistor of ”-”sign is abbreviation. COLLECTOR CURRENT VS INPUT OFF VOLTAGE 10 100 1000 0.0 0.5 1.0 1.5 2.0 INPUT OFF VOLTAGE VI(off) (V) VCE=5V INPUT ON VOLTAGE VS COLLECTR CURRENT 0.1 1 10 1 10 100 COLLECTOR CURRENT IC(mA) VCE=0.2V DC FORWARD CURRENT GAIN VS COLLECTOR CURRENT 10 100 1000 10000 0.1 1 10 100 COLLECTOR CURRENT IC(mA) VCE=5V |
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