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SPW11N60S5 数据表(PDF) 7 Page - Infineon Technologies AG

部件名 SPW11N60S5
功能描述  Cool MOS??Power Transistor
PDF  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

SPW11N60S5 数据表(HTML) 7 Page - Infineon Technologies AG

Back Button SPW11N60S5 Datasheet HTML 3Page - Infineon Technologies AG SPW11N60S5 Datasheet HTML 4Page - Infineon Technologies AG SPW11N60S5 Datasheet HTML 5Page - Infineon Technologies AG SPW11N60S5 Datasheet HTML 6Page - Infineon Technologies AG SPW11N60S5 Datasheet HTML 7Page - Infineon Technologies AG SPW11N60S5 Datasheet HTML 8Page - Infineon Technologies AG SPW11N60S5 Datasheet HTML 9Page - Infineon Technologies AG SPW11N60S5 Datasheet HTML 10Page - Infineon Technologies AG SPW11N60S5 Datasheet HTML 11Page - Infineon Technologies AG  
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2004-03-30
Rev. 2.1
Page 7
SPW11N60S5
9 Typ. gate charge
VGS = f (QGate)
parameter: ID = 11 A pulsed
0
10
20
30
40
50
nC
65
QGate
0
2
4
6
8
10
12
V
16
SPW11N60S5
0.2 V
DS max
0.8 V
DS max
10 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
0
0.4
0.8
1.2
1.6
2
2.4
V
3
VSD
-1
10
0
10
1
10
2
10
A
SPW11N60S5
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 150 °C typ
T
j = 150 °C (98%)
11 Avalanche SOA
IAR = f (tAR)
par.: Tj ≤ 150 °C
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
µs
tAR
0
1
2
3
4
5
6
7
8
9
A
11
Tj(START)=125°C
Tj(START)=25°C
12 Avalanche energy
EAS = f (Tj)
par.: ID = 5.5 A, VDD = 50 V
20
40
60
80
100
120
°C
160
Tj
0
50
100
150
200
250
mJ
350



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