〈SMALL-SIGNAL DIODE〉

RT3DSSM

FOR HIGH SPEED SWITCHING APPLICATION

SILICON EPITAXIAL TYPE(SERIES TYPE)

ISAHAYA ELECTRONICS CORPORATION

PRELIMINARY

Notice：This is not a final specification

Some parametric are subject to change.

DESCRIPTION

RT3DSSM is a super mini package plastic seal type silicon epitaxial

type composite diode, built with two Series type MC2840.

Quadruple and small pin capacitance (4 pieces), suitable for protect

circuit, bias circuit.

FEATURE

●Small pin capacitance

●Quadruple diodes and super mini package for mounting

APPLICATION

For general high speed switching of audio machine,VTR.

OUTLINEDRAWING

Unit：ｍｍ

MAXIMUM RATINGS（Ta=25℃）（Di1,Di2 COMMON）

Symbol

Parameter

Ratings

Unit

V

RM

Peak reverse voltage

35

V

V

R

DC reverse voltage

30

V

I

FSM

Surge current（1μs）

4

A

I

FM

Peak forward current

300

mA

I

O

Average rectification current

100

mA

P

T

Total allowance dissipation

200

mW

T

ｊ

Junction temperature

＋150

℃

Tstg

Storage temperature

-55～＋150

℃

ELECTRICAL CHARACTERISTICS（Ta=25℃）（Di1,Di2 COMMON）

Parameter

Symbol

Test conditions

Limits

Uniit

Min

Typ

Max

Forward voltage

V

F1

I

-

0.75

1.0

V

V

F2

I

-

085

1.2

V

F3

I

-

0.90

1.4

Reverse current

I

R

V

-

-

0.1

μA

Pin capacitance

C

ｔ

Di1

-

6

-

pF

Di2

-

10

-

MARKING

DSS

●

①

②

③

⑥

⑤

④

Type Name

JEITA：SC-88

JEDEC：－

MC2840

MC2840

Di1

Di2

Di1

Di2

Equivalent circuit