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TLE4913 数据表(PDF) 3 Page - Infineon Technologies AG |
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TLE4913 数据表(HTML) 3 Page - Infineon Technologies AG |
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3 / 12 page ![]() Data Sheet 3 V 2.2, 2004-03-09 AEB02800_13 Chopped Amplifier Hall Probe Latch Active Error Compensation Oscillator & Sequencer Threshold Generator Bias and Compensation Circuits V S 1 3 GND Comparator with Hysteresis 2 Q Decision Logic Figure 2 Block Diagram Circuit Description The Low Power Hall IC Switch comprises a Hall probe, bias generator, compensation circuits, oscillator, output latch and an n-channel open drain output transistor. The bias generator provides currents for the Hall probe and the active circuits. Compensation circuits stabilize the temperature behavior and reduce technology variations. The Active Error Compensation rejects offsets in signal stages and the influence of mechanical stress to the Hall probe caused by molding and soldering processes and other thermal stresses in the package. This chopper technique together with the threshold generator and the comparator ensures high accurate magnetic switching points. Very low power consumption is achieved with a timing scheme controlled by an oscillator and a sequencer. This circuitry activates the sensor for 50 µs (typical operating time) sets the output state after sequential questioning of the switch points and latches it with the beginning of the following standby phase (max. 200 ms). In the standby phase the average current is reduced to typical 4 µA. Because of the long standby time compared to the operating time the overall averaged current is only slightly higher than the standby current. The output transistor can sink up to 1 mA with a maximal saturation voltage VQSAT. |
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