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TLE4976L 数据表(PDF) 4 Page - Infineon Technologies AG |
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TLE4976L 数据表(HTML) 4 Page - Infineon Technologies AG |
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4 / 9 page ![]() TLE4976L Data Sheet 4/9 2003-11-20 Absolute Maximum Ratings Tj = -40 to 150°C Parameter Symbol min. max. Unit Conditions Supply Voltage VS -18 -18 -18 18 24 26 V for 1h (RS+RL > 75 Ohm) for 5min (RS+RL > 75 Ohm) Supply Current through protection device Is -50 +50 mA Junction Temperature Tj - 155 165 175 195 °C for 2000 h (not additive) for 1000 h (not additive) for 168 h (not additive) for 3x1 h (additive) Storage Temperature TS -40 150 °C Magnetic Flux Density B - unlimit. mT Note: Stresses above those listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ESD Protection Human Body Model (HBM) tests according to: EOS/ESD Association Standard S5.1-1993 and Mil. Std. 883D method 3015.7 Parameter Symbol max. Unit Conditions ESD Voltage VESD ± 8 kV HBM, R= 1.500 Ohm, C= 100pF; TA = 25°C Operating Range Parameter Symbol min. typ. max. Unit Conditions Supply Voltage VS 3.0 3.0 - 18 24 V for 5min (RS+RL > 100 Ohm) Junction Temperature Tj -40 - 150 175 °C for 168 h |
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