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UT54ACTS86 数据表(PDF) 2 Page - Aeroflex Circuit Technology |
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UT54ACTS86 数据表(HTML) 2 Page - Aeroflex Circuit Technology |
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2 / 9 page ![]() 2 OPERATIONAL ENVIRONMENT1 Notes: 1. Logic will not latchup during radiation exposure within the limits defined in the table. 2. Device storage elements are immune to SEU affects. ABSOLUTE MAXIMUM RATINGS Note: 1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS PARAMETER LIMIT UNITS Total Dose 1.0E6 rads(Si) SEU Threshold 2 80 MeV-cm2/mg SEL Threshold 120 MeV-cm2/mg Neutron Fluence 1.0E14 n/cm2 SYMBOL PARAMETER LIMIT UNITS VDD Supply voltage -0.3 to 7.0 V VI/O Voltage any pin -.3 to VDD +.3 V TSTG Storage Temperature range -65 to +150 °C TJ Maximum junction temperature +175 °C TLS Lead temperature (soldering 5 seconds) +300 °C Θ JC Thermal resistance junction to case 20 °C/W II DC input current ±10 mA PD Maximum power dissipation 1 W SYMBOL PARAMETER LIMIT UNITS VDD Supply voltage 4.5 to 5.5 V VIN Input voltage any pin 0 to VDD V TC Temperature range -55 to + 125 °C |
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