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10-R0126PA025SC-M627F40 数据表(PDF) 3 Page - Vincotech

部件名 10-R0126PA025SC-M627F40
功能描述  Clip-in PCB mounting (optional)
PDF  17 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  VINCOTECH [Vincotech]
网页  http://www.vincotech.com
标志 VINCOTECH - Vincotech

10-R0126PA025SC-M627F40 数据表(HTML) 3 Page - Vincotech

  10-R0126PA025SC-M627F40 Datasheet HTML 1Page - Vincotech 10-R0126PA025SC-M627F40 Datasheet HTML 2Page - Vincotech 10-R0126PA025SC-M627F40 Datasheet HTML 3Page - Vincotech 10-R0126PA025SC-M627F40 Datasheet HTML 4Page - Vincotech 10-R0126PA025SC-M627F40 Datasheet HTML 5Page - Vincotech 10-R0126PA025SC-M627F40 Datasheet HTML 6Page - Vincotech 10-R0126PA025SC-M627F40 Datasheet HTML 7Page - Vincotech 10-R0126PA025SC-M627F40 Datasheet HTML 8Page - Vincotech 10-R0126PA025SC-M627F40 Datasheet HTML 9Page - Vincotech Next Button
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10-R01126PA008SC-M627F40
10-RZ1126PA008SC-M627F41
Parameter
Symbol
Unit
VGE [V] or
VGS [V]
Vr [V]
or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
Min
Typ
Max
Tj=25°C
5,0
5,8
6,5
Tj=150°C
Tj=25°C
1,5
1,91
2,3
Tj=150°C
2,21
Tj=25°C
10
Tj=150°C
Tj=25°C
200
Tj=150°C
Tj=25°C
55
Tj=150°C
54
Tj=25°C
23
Tj=150°C
24
Tj=25°C
177
Tj=150°C
240
Tj=25°C
67
Tj=150°C
121
Tj=25°C
0,556
Tj=150°C
0,870
Tj=25°C
0,434
Tj=150°C
0,733
Thermal resistance chip to heatsink per chip
RthJH
Phase-Change
Material
1,85
K/W
Thermal resistance chip to heatsink per chip
RthJH
Thermal grease
thickness
≤50um
λ = 1 W/mK
2,18
K/W
Tj=25°C
1,2
1,69
2,30
Tj=150°C
1,59
Tj=25°C
7
Tj=150°C
9
Tj=25°C
247
Tj=150°C
428
Tj=25°C
0,85
Tj=150°C
1,77
di(rec)max
Tj=25°C
80
/dt
Tj=150°C
44
Tj=25°C
0,328
Tj=150°C
0,714
Thermal resistance chip to heatsink per chip
RthJH
Phase-Change
Material
1,95
K/W
Thermal resistance chip to heatsink per chip
RthJH
Thermal grease
thickness
≤50um
λ = 1 W/mK
2,30
K/W
Tj=25°C
pF
mWs
ns
ns
A
nC
nA
V
µA
V
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
50
none
Rgon=32
Thermistor
∆R/R
Rated resistance
R
Power dissipation constant
Deviation of R25
mW/K
Power dissipation
P
mW
600
600
8
0,0003
25
0
960
8
1200
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Fall time
Turn-off delay time
Turn-on delay time
Rise time
Gate-emitter leakage current
Reverse recovery time
Reverse recovered energy
Peak rate of fall of recovery current
Turn-on energy loss per pulse
Reverse recovered charge
Inverter Diode
Peak reverse recovery current
Reverse transfer capacitance
Diode forward voltage
Gate charge
Cies
±15
8
8
±15
Rgon=32
0
20
15
Rgoff=32
f=1MHz
mWs
A/µs
µC
Characteristic Values
Value
Conditions
Input capacitance
Output capacitance
Turn-off energy loss per pulse
Integrated Gate resistor
Inverter Transistor
Gate emitter threshold voltage
VGE(th)
VCE(sat)
ICES
Rgint
IGES
tf
Eon
Eoff
td(on)
IRRM
VF
Coss
Crss
Qrr
trr
QGate
tr
td(off)
VCE=VGE
Erec
0
15
2
200
5
-5
%
4700
8
V
490
Tj=25°C
30
53
B-value
B(25/50)
Tol. ±3%
Tj=25°C
3500
K
B(25/100)
Tj=25°C
3560
K
B-value
Vincotech NTC Reference
G
Tj=25°C
3
Revision: 2
Copyright by Vincotech



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