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10-R0126PA025SC-M629F40 数据表(PDF) 3 Page - Vincotech

部件名 10-R0126PA025SC-M629F40
功能描述  Clip-in PCB mounting (optional)
PDF  17 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  VINCOTECH [Vincotech]
网页  http://www.vincotech.com
标志 VINCOTECH - Vincotech

10-R0126PA025SC-M629F40 数据表(HTML) 3 Page - Vincotech

  10-R0126PA025SC-M629F40 Datasheet HTML 1Page - Vincotech 10-R0126PA025SC-M629F40 Datasheet HTML 2Page - Vincotech 10-R0126PA025SC-M629F40 Datasheet HTML 3Page - Vincotech 10-R0126PA025SC-M629F40 Datasheet HTML 4Page - Vincotech 10-R0126PA025SC-M629F40 Datasheet HTML 5Page - Vincotech 10-R0126PA025SC-M629F40 Datasheet HTML 6Page - Vincotech 10-R0126PA025SC-M629F40 Datasheet HTML 7Page - Vincotech 10-R0126PA025SC-M629F40 Datasheet HTML 8Page - Vincotech 10-R0126PA025SC-M629F40 Datasheet HTML 9Page - Vincotech Next Button
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10-RZ126PA025SC-M629F41
10-R0126PA025SC-M629F40
Parameter
Symbol
Unit
VGE [V] or
VGS [V]
Vr [V]
or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
Min
Typ
Max
Tj=25°C
5
5,8
6,5
Tj=150°C
Tj=25°C
1,5
1,96
2,4
Tj=150°C
2,28
Tj=25°C
0,01
Tj=150°C
Tj=25°C
200
Tj=150°C
Tj=25°C
66
Tj=150°C
67
Tj=25°C
42
Tj=150°C
43
Tj=25°C
196
Tj=150°C
264
Tj=25°C
71
Tj=150°C
138
Tj=25°C
2,13
Tj=150°C
3,15
Tj=25°C
1,47
Tj=150°C
2,48
Thermal resistance chip to heatsink per chip
RthJH
Phase-Change
Material
1,17
K/W
Thermal resistance chip to heatsink per chip
RthJH
Thermal grease
thickness
≤50um
λ = 1 W/mK
1,38
K/W
Tj=25°C
1,2
1,90
2,4
Tj=150°C
1,83
Tj=25°C
13
Tj=150°C
17
Tj=25°C
318
Tj=150°C
524
Tj=25°C
2,22
Tj=150°C
4,50
di(rec)max
Tj=25°C
115
/dt
Tj=150°C
92
Tj=25°C
0,86
Tj=150°C
1,78
Thermal resistance chip to heatsink per chip
RthJH
Phase-Change
Material
1,51
K/W
Thermal resistance chip to heatsink per chip
RthJH
Thermal grease
thickness
≤50um
λ = 1 W/mK
1,77
K/W
G
Tj=25°C
Vincotech NTC Reference
B-value
3500
K
B(25/100)
Tj=25°C
3560
K
Tj=25°C
B-value
B(25/50)
Tol. ±3%
120
1430
Tj=25°C
85
V
25
%
4700
5
-5
2
200
15
0
tr
td(off)
VCE=VGE
Erec
QGate
Coss
Crss
Qrr
trr
IGES
tf
Eon
Eoff
td(on)
IRRM
VF
VGE(th)
VCE(sat)
ICES
Rgint
Input capacitance
Output capacitance
Turn-off energy loss per pulse
Integrated Gate resistor
Inverter Transistor
Gate emitter threshold voltage
Value
Conditions
Characteristic Values
µC
mWs
A/µs
f=1MHz
Rgon=16
0
20
15
Rgoff=16
±15
40
25
±15
Turn-on energy loss per pulse
Reverse recovered charge
Inverter Diode
Peak reverse recovery current
Reverse transfer capacitance
Diode forward voltage
Gate charge
Cies
Reverse recovery time
Reverse recovered energy
Peak rate of fall of recovery current
Collector-emitter cut-off current incl. Diode
Fall time
Turn-off delay time
Turn-on delay time
Rise time
Gate-emitter leakage current
Collector-emitter saturation voltage
1200
25
0
960
25
25
0,00085
600
600
mW/K
Power dissipation
P
mW
Rated resistance
R
Power dissipation constant
Deviation of R25
∆R/R
Thermistor
Rgon=16
115
none
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
V
ns
A
nC
nA
V
mA
mWs
ns
pF
Tj=25°C
3
Revision: 2
Copyright by Vincotech



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