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54LCX245 数据表(PDF) 3 Page - National Semiconductor (TI) |
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54LCX245 数据表(HTML) 3 Page - National Semiconductor (TI) |
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3 / 6 page ![]() Absolute Maximum Ratings (Note 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage (V CC) −0.5V to +7.0V DC Input Voltage (V I) −0.5V to +7.0V DC Input Diode Current (I IK) V I < GND −50 mA DC Output Diode Current (I OK) V O < GND −50mA V O ≥ VCC +50mA DC Output Voltage (V O) Output in High or Low State -0.5V to V CC + 0.5V Output in TRI-STATE -0.5V to 7.0V DC Output Source or Sink Current (I O) ±50mA DC V CC or Ground Current ±200mA Storage Temperature Range (T STG) −65˚C to +150˚C Junction Temperature (T J) CDIP 175˚C Recommended Operating Conditions (Note 3) Supply Voltage (V CC) Operating 2.0V to 3.6V Data Retention 1.5V to 3.6V Input Voltage (V I) 0V to 5.5V Output Voltage (V O) High or Low State 0V to V CC TRI-STATE 0V to 5.5V Operating Temperature (T A) 54LCX −55˚C to +125˚C Minimum Input Edge Rate ( ∆t/∆V) V IN from 0.8V to 2.0V, VCC = 3.0V 0ns/V to 10ns/V Note 2: The Absolute Maximum Ratings are those values beyond which the safety of the device cannot be guaranteed. The device should not be oper- ated at these limits. The parametric values defined in the Electrical Charac- teristics tables are not guaranteed at the Absolute Maximum Ratings. The “Recommended Operating Conditions” table will define the conditions for ac- tual device operation. Note 3: IO Absolute Maximum Rating must be observed. DC Electrical Characteristics Symbol Parameter Conditions VCC TA = −55˚C to +125˚C Units (V) Min Max VIH HIGH Level Input Voltage 2.7–3.6 2.0 V VIL LOW Level Input Voltage 2.7–3.6 0.8 V VOH HIGH Level Output Voltage IOH = −100 µA 2.7–3.6 VCC − 0.2 V IOH = −12 mA 2.7 2.2 V IOH = −12 mA 3.0 2.4 V IOH = −24 mA 3.0 2.2 V VOL LOW Level Output Voltage IOL = 100 µA 2.7–3.6 0.2 V IOL = 12 mA 2.7 0.4 V IOL = 24 mA 3.0 0.55 V II Input Leakage Current 0 ≤ V I ≤ 5.5V 2.7–3.6 ±5.0 µA VIKL Clamp Diode Voltage IM = -18mA 3.0 -1.2 V IOZ TRI-STATE I/O Leakage 0 ≤ V O ≤ 5.5V 2.7–3.6 ±5.0 µA VI = VIH or VIL ICCZ Supply Current Outputs TRI-STATE VI = 5.5V or GND 2.7-3.6 10 µA IOFF Power-Off Leakage Current VCC = 0V, VI = 0V, VM = 5.5V 0 100 µA ICC Quiescent Supply Current VI = VCC or GND 2.7-3.6 10 µA ∆I CC Increase in ICC per Input VIH = VCC −0.6V 2.7–3.6 0.5 mA www.national.com 3 |
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