Linear Integrated Systems

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Doc 201121 03/17/2014 Rev#A10 ECN# LS310_11_12_13

FEATURES

VERY HIGH GAIN

≥200@10µA-1mA

250MHz TYP. @ 1mA

ABSOLUTE MAXIMUM RATINGS NOTE 1

@ 25°C (unless otherwise noted)

Collector

Current

10mA

Maximum Temperatures

Storage Temperature

-55° to +150°C

Operating Junction Temperature

-55° to +150°C

Maximum Power Dissipation

ONE SIDE

BOTH SIDES

Device Dissipation @ Free Air

250mW

500mW

Linear Derating Factor

2.3mW/°C

4.3mW/°C

SYMBOL

CHARACTERISTICS

LS310 LS311 LS312 LS313

UNITS

CONDITIONS

Collector to Base Voltage

25

45

60

45

MIN.

V

Collector to Emitter Voltage

25

45

60

45

MIN.

V

Emitter-Base Breakdown

Voltage

6.0

6.0

6.0

6.0

MIN.

V

NOTE 2

Collector to Collector Voltage

45

45

60

45

MIN.

V

DC Current Gain

150

150

200

400

1000

MIN.

MAX.

DC Current Gain

150

150

200

400

MIN.

DC Current Gain

150

150

200

400

MIN.

Collector Saturation Voltage

0.25

0.25

0.25

0.25

MAX.

V

Collector Cutoff Current

0.2

0.2

0.2

0.2

MAX.

nA

Emitter Cutoff Current

0.2

0.2

0.2

0.2

MAX.

nA

Out put Capacitance

2

2

2

2

MAX.

pF

Collector to Collector

Capacitance

2

2

2

2

MAX.

pF

Collector to Collector Leakage

Current

1.0

1.0

1.0

1.0

MAX.

µA

Current Gain Bandwidth

Product

200

200

200

200

MIN.

MHz

NF

Narrow Band Noise Figure

3

3

3

3

MAX.

dB

0KΩ

F=1KHz

LS310 LS311 LS312 LS313

MONOLITHIC DUAL

NPN

TRANSISTORS

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

Top View

SOT-23 6 LEADS

Top View

TO-71 & TO-78