Monolithic Low Noise E-PHEMT MMIC Amplifier

Notes

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.

B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.

C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled

to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp

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PMA2-252LN+

Fig 1. Application and Characterization circuit

Note: This block diagram is used for characterization. (DUT soldered on Mini-Circuits Characterization test board TB-642+)

Gain, Return loss, Output power at 1dB compression (P1 dB) , output IP3 (OIP3) and noise figure measured using Agilent’s N5242A

PNA-X microwave network analyzer.

Conditions:

1. Gain and Return loss: Pin= -25dBm

2. Output IP3 (OIP3): Two tones, spaced 2.5 MHz apart, 2 dBm/tone at output.

Recommended Application and Characterization Test Circuit

black body

model family designation

Product Marking

PMA2

252L

index over pin 1

Typical Device Current vs Rbias (at R1=825 ohms)

20

30

40

50

60

70

80

90

0

200

400

600

800

1000

1200

1400

Rbias (Ohms)

Vs=4V

Vs=3V

Rbias

1,8, paddle

TB-642+