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SP3243EEA 数据表(PDF) 2 Page - Sipex Corporation |
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SP3243EEA 数据表(HTML) 2 Page - Sipex Corporation |
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2 / 24 page ![]() Rev. 11/14/02 SP3223E +3.0V to +5.5V RS-232 Transceivers © Copyright 2002 Sipex Corporation 2 NOTE 1: V+ and V- can have maximum magnitudes of 7V, but their absolute difference cannot exceed 13V. ABSOLUTE MAXIMUM RATINGS These are stress ratings only and functional operation of the device at these ratings or any other above those indicated in the operation sections of the specifications below is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability and cause permanent damage to the device. V CC.......................................................-0.3V to +6.0V V+ (NOTE 1).......................................-0.3V to +7.0V V- (NOTE 1)........................................+0.3V to -7.0V V+ + |V-| (NOTE 1)...........................................+13V I CC (DC VCC or GND current).........................+100mA Input Voltages TxIN, ONLINE, SHUTDOWN, EN (SP3223E).................-0.3V to +6.0V RxIN...................................................................+15V Output Voltages TxOUT...............................................................+15V RxOUT, STATUS.......................-0.3V to (V CC + 0.3V) Short-Circuit Duration TxOUT.....................................................Continuous Storage Temperature......................-65°C to +150°C Unless otherwise noted, the following specifications apply for V CC = +3.0V to +5.5V with TAMB = TMIN to TMAX. Typical values apply at V CC = +3.3V or +5.0V and TAMB = 25°C. SPECIFICATIONS R E T E M A R A P. N I M. P Y T. X A MS T I N US N O I T I D N O C S C I T S I R E T C A R A H C C D , t n e r r u C y l p p u S E N I L - N O O T U A ® 0 . 10 1 µA , D N G = E N I L N O , n e p o N I x R ll A V = N W O D T U H S C C V = N I x T , C C r o V , D N G C C T , V 3 . 3 + = B M A C ° 5 2 + = n w o d t u h S , t n e r r u C y l p p u S0 . 10 1 µA V = N I x T , D N G = N W O D T U H S C C r o V , D N G C C T , V 3 . 3 + = B M A C ° 5 2 + = , t n e r r u C y l p p u S E N I L - N O O T U A ® d e l b a s i D 3 . 00 . 1A mV = N W O D T U H S = E N I L N O C C , V , d a o l o n C C T , V 3 . 3 + = B M A C ° 5 2 + = S T U P T U O R E V I E C E R D N A S T U P N I C I G O L d l o h s e r h T c i g o L t u p n I W O L H G I H0 . 2 8 . 0 V V C C N I x T , V 0 . 5 + r o V 3 . 3 + =, ( N E E 3 2 2 3 P S , E N I L N O , ) N W O D T U H S t n e r r u C e g a k a e L t u p n I1 0 . 0 ±0 . 1 ± µA , N W O D T U H S , E N I L N O , N E , N I x T T B M A C ° 5 2 + = t n e r r u C e g a k a e L t u p t u O5 0 . 0 ±0 1 ± µA d e l b a s i d s r e v i e c e R W O L e g a t l o V t u p t u O4 . 0V I T U O A m 6 . 1 = H G I H e g a t l o V t u p t u OV C C 6 . 0 -V C C 1 . 0 -V I T U O A m 0 . 1 - = Power Dissipation per package 28-pin PDIP (derate 16.0mW/oC above+70oC).....1300mW 20-pin SSOP (derate 9.25mW/oC above +70oC)....750mW 20-pin TSSOP (derate 11.1mW/oC above +70oC)..900mW 28-pin SOIC (derate 12.7mW/oC above +70oC)...1000mW 28-pin SSOP (derate 11.2mW/oC above +70oC)....900mW |
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