SMD ESD Protection Diode

Page 2

AQW-G7005

REV:B

Comchip Technology CO., LTD.

Company reserves the right to improve product design , functions and reliability without notice.

Rating and

Curves

Characteristic

Fig. 4 - Power Rating Derating Curve

Ambient Temperature, ( °C )

20

40

60

80

100

Mounting on glass epoxy PCBs

Fig.2 - Typical Capacitance Between

Terminals Characteristics

Reverse Voltage, (V)

0

5

10

15

25

0

1

2

3

4

5

Fig.1 - Reverse Characteristics

Reverse Voltage, (%)

0

20

40

60

100

100n

1u

10u

10n

80

0

25

50

75

100

150

125

20

Symbol

Typ

Parameter

Min

Max

Unit

Junction capacitance

Conditions

Diode breakdown voltage

V

Reverse leakage current

nA

30

pF

5.6

9.4

24

90

ESD capability

kV

±30

Storage temperature

Operation temperature

+150

°C

°C

+150

-40

ESD

IEC 61000-4-2(air)

IEC 61000-4-2(contact)

Clamping Voltage

8

V

V

12

-40

-

5

-

-

-

-

-

-

-

-

-

-

Reverse stand-Off voltage

5

V

-

-

Fig.3 - Clamping Voltage Vs.

Peak Pulse Current

Peak Pulse Current, (A)

0

16

14

12

10

8

6

4

2

0

2

4

6

8

10

12

Waveform

Parameters:

tr=8us

td=20us