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REV: A

Comchip Technology CO., LTD.

Company reserves the right to improve product design , functions and reliability without notice.

MOSFET

Symbol

Parameter

Conditions

Min

Max

Units

Drain-source breakdown voltage

20

Zero gate voltage drain current

Forward transconductance (Note 1)

Reverse transfer capacitance

Input capacitance

Turn-on delay time

Turn-off delay time

Rise time

Fall time

1

20

1

9

6

13

52

16

V

mΩ

S

nS

1150

Dynamic Parameters (Note 2)

22

Output capacitance

Typ

185

145

pF

Static Parameters

0.4

Gate threshold voltage (Note 1)

Gate-body leakage current

±1

µA

Drain-source on-resistance (Note 1)

µA

Diode forward voltage (Note 1)

1

V

1.

.

Pulse test: Pulse width

≤300µs, Duty cycle≤0.5%

Notes:

Switching Parameters (Note 2)

Total gate charge

15

nC

Gate-source charge

0.8

Gate-drain charge

3.2

V

,

±10

14

16

24

17

26

20

35

28

2. Guaranteed by design, not subject to production testing.

QW-JTR15