DF2S6.8UFS datasheet(2/7 Pages) TOSHIBA

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DF2S6.8UFS

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, Taaaa = 25

= 25

= 25



))))

Characteristics

Electrostatic discharge voltage (IEC61000-4-2)(Contact)

Junction temperature

Storage temperature

Symbol

VESD

Tstg

Rating

±8

150

-55 to 150

Unit



Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

4. Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, Taaaa = 25

= 25

= 25



))))

VRWM: Working peak reverse

voltage

VBR: Reverse breakdown voltage

VR: Reverse voltage

IBR: Reverse breakdown current

IR: Reverse current

VC: Clamp voltage

IPP: Peak pulse current

RDYN: Dynamic resistance

IF: Forward current

VF: Forward voltage

Fig.

Fig. 4.1

4.1

4.1 Definitions of Electrical Characteristics

Definitions of Electrical Characteristics

Characteristics

Working peak reverse voltage

Reverse breakdown voltage

Reverse current

Dynamic resistance

Total capacitance

Working peak reverse voltage

Reverse breakdown voltage

Reverse current

Symbol

VRWM(1)

VBR(1)

IR(1)

RDYN

VRWM(2)

VBR(2)

IR(2)

Note

(Note 1)

Test Condition



IBR = 1 mA

VRWM = 5 V

VR = 0 V, f = 1 MHz



IBR = 1 mA

VRWM = 19 V

Min



5.3



Typ.



6.8



0.3

1.6



Max



0.1



0.5

Unit

µA

Ω

µA

Note 1: TLP parameter: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns,

extraction of dynamic resistance using a least-squares fit of TLP characteristics at IPP between 3 A to 8 A.

2014-07-23

Rev.5.0

DF2S6.8UFS 数据表(PDF) 2 Page - Toshiba Semiconductor

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