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D882M 数据表(PDF) 1 Page - Comchip Technology |
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D882M 数据表(HTML) 1 Page - Comchip Technology |
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1 / 4 page ![]() Page 1 QW-BTR51 REV:A Comchip Technology CO., LTD. Dimensions in inches and (millimeters) D882M-G RoHS Device Features - Power Dissipation - High collector current. - High current gain. - Low collector-emitter saturation voltage. Diagram General Purpose Transistors 0.264(6.70) 0.256(6.50) 0.215(5.46) 0.202(5.13) 0.055(1.40) 0.031(0.80) 0.409(10.40) 0.386( 9.80) 0.186(4.73) 0.170(4.33) 0.090(2.29) Typ. 0.032(0.81) 0.028(0.71) Φ 0.051(1.30) 0.043(1.10) 0.094(2.38) 0.087(2.20) 0.022(0.56) 0.018(0.46) 0.244(6.20) 0.236(6.00) 0.114(2.90) REF. 0.067(1.70) 0.055(1.40) 0.022(0.56) 0.018(0.46) 0.004(0.10) MAX. 0.070(1.78) REF. 0.190(4.83 ) REF. TO-252-2L Symbol Parameter Conditions Min Max Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency 40 30 6 100 90 1 1 200 0.5 1.5 V V V μA μA V V MHz V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT IC = 100μA, IE = 0 IC = 10mA, IB = 0 IE = 100μA, IC = 0 VCB = 40V, IE = 0 VEB = 6V, IC = 0 VCE = 2V, IC = 1A IC = 2A, IB = 0.2A IC = 2A, IB = 0.2A VCE = 5V, IC = 0.1A, f = 10MHz Typ Electrical Characteristics (at TA=25°C unless otherwise noted) Collector cut-off current 10 μA ICEO VCE = 30V, IB = 0 Company reserves the right to improve product design , functions and reliability without notice. C E B Parameter Value Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-continuous Collector power dissipation Junction temperature range VCBO VCEO VEBO IC PC TJ 40 30 6 3 1.25 150 V V V A W °C Maximum Ratings (at TA=25°C unless otherwise noted) Symbol Storage temperature range TSTG -55 to +150 °C - 1. BASE - 2. COLLECTOR - 3. EMITTER 1 2 3 1 2 3 |
类似零件编号 - D882M |
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类似说明 - D882M |
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