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US2ABF 数据表(PDF) 2 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd |
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US2ABF 数据表(HTML) 2 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd |
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2 / 2 page ![]() RATINGS AND CHARACTERISTIC CURVES US2ABF THRU US2MBF 50 ohm Noninductive 25Vdc approx + - D.U.T 10 ohm Noninductive NonInductive 1 ohm OSCILLOSCOPE Note 1 PULSE GENERATOR Note 2 Note:1. Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram Fig.3 Typical Reverse Characteristics 20 100 60 0 0.1 1.0 10 % of PIV.VOLTS 100 40 80 300 T =25 J °C T =75 J °C T =125 J °C -0.25 -1.0 0 +0.5 trr 10ns/div Set time Base for 10ns/div 10 20 30 40 50 60 00 10 100 Fig.4 Maximum Non-Repetitive Peak Forward Surage Current Number of Cycles 8.3 ms Single Half Sine Wave (JEDEC Method) 1 0.5 1.0 1.5 2.0 2.5 0.0 25 50 75 100 125 150 175 Ambient /Lead Temperature ( °C) Fig.2 Maximum Average Forward Current Rating Single phase half wave resistive or inductive P.C.B mounted on 0.5×0.5"(12.7 ) ×12.7mm pad areas. Ambient Lead 100LFM US2ABF~US2GBF US2JBF~US2MBF Fig.3 Typical Instaneous Forward Characteristics 0.5 1.0 1.5 2.0 2.5 0.0 0.01 0.1 1.0 10 Instaneous Forward Voltage (V) 20 pulse with 300μs 1% duty cycle T =25 J °C US2ABF~US2DBF US2GBF US2JBF~US2MBF The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)! |
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