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数据搜索系统，热门电子元器件搜索 |
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BAV20WS 数据表(PDF) 2 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd |
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BAV20WS 数据表(HTML) 2 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd |
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2 / 4 page  Silicon Epitaxial Planar Diode BAV19WS/BAV20WS/BAV21WS ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage BAV19WS BAV20WS BAV21WS V(BR)R 120 200 250 V IR=100uA Forward Voltage VFM - 1.0 1.25 V IF=100mA IF=200mA Reverse Current BAV19WS BAV20WS BAV21WS IR - 0.1 0.1 0.1 μA VR=100V VR=150V VR=200V Capacitance between terminals CT - 5 pF VR=0,f=1.0MHz Reverse Recovery Time trr - 50 ns IF=IR=30mA, Irr=0.1×IR,RL=100Ω ２０１４－０３ ０１版 ｈｔｔｐ：／／ｗｗｗ．ｍｉｃｒｏｄｉｏｄｅ．ｃｏｍ |
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