GaAs SPDT 2.7 V High Power Switch

DC - 5.0 GHz

Rev. V2

MASW-008853

2

2

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2

5

5. For positive voltage control, external DC blocking capacitors are required on all RF ports.

6. Insertion loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 MHz - 1 GHz, 39 pF for 0.5 GHz - 3 GHz.

Parameter

Test Conditions

Units

Min.

Typ.

Max.

1 GHz

2 GHz

3 GHz

4 GHz

5 GHz

dB

dB

dB

dB

dB

—

—

—

—

—

0.30

0.36

0.45

0.70

1.10

0.65

—

—

—

—

Isolation

1 GHz

2 GHz

3 GHz

4 GHz

5 GHz

dB

dB

dB

dB

dB

23

—

—

—

—

25

19

15

13

11

—

—

—

—

—

Return Loss

DC – 3 GHz

dB

—

20

—

IP3

825 MHz

Two Tone, +24 dBm Total Pin, 5 MHz Spacing

dBm

—

56

—

Cross Modulation

Two-tone signal input: Tx1 = +22 dBm @ 820 MHz,

Tx2 = +22 dBm @ 821 MHz,

dBm

—

-99

—

Two-tone signal input: Tx1 = +18 dBm @ 1880 MHz,

Tx2 = +18 dBm @ 1881 MHz,

dBm

—

-94

—

P0.1dB

1 GHz

dBm

—

38

—

Trise, Tfall

10% to 90% RF, 90% to 10% RF

nS

—

70

—

Ton, Toff

50% control to 90% RF,

50% control to 10% RF

nS

—

100

—

Transients

In Band

mV

—

25

—

Control Current

µA

—

5

20

7. For positive voltage control, external DC blocking capacitors

are required on all RF ports.

8. Differential voltage, V(state 1) - V(state 0), must be +2.7 V

minimum, but must not exceed 8.5 V.

9. 0 = -5 V to +2.3 V, 1 = -2.3 V to +5 V.

V1

V2

ANT– RF1

ANT - RF2

1

0

On

Off

0

1

Off

On

Qualification

Qualified to M/A-COM specification REL-201,

Process Flow –2.

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive

to electrostatic discharge (ESD) and can be

damaged by static electricity. Proper ESD control

techniques should be used when handling these

devices.