GaAs SPDT Switch

DC - 3.0 GHz

Rev. V2

MASWSS0136

2

2

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2

4

Qualification

Qualified to M/A-COM specification REL-201, Proc-

ess Flow –2.

Handling Procedures

The following precautions should be observed to

avoid damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive

to electrostatic discharge (ESD) and can be dam-

aged by static electricity. Proper ESD control tech-

niques should be used when handling these de-

vices.

Control V1

Control V2

RFC-RF1

RFC-RF2

0

1

On

Off

1

0

Off

On

6. Differential voltage, V (state 1) - V (state 0), must be +2.3 V

minimum and must not exceed 8.5 V.

7. 0 = 0 V ± 0.2 V, 1 = +2.5 V to 5.0 V

Parameter

Test Conditions

Units

Min.

Typ.

Max.

1.0 GHz

2.4 GHz

dB

dB

—

—

0.3

0.4

—

0.5

Isolation

1.0 GHz

2.4 GHz

dB

dB

—

25

24

27

—

—

VSWR

0.05 - 3.0 GHz

Ratio

—

1.2:1

—

IP2

Two Tone, +5 dBm / Tone, 5 MHz Spacing

2.4 GHz

dBm

—

80

—

IP3

Two Tone, +5 dBm / Tone, 5 MHz Spacing

2.4 GHz

dBm

—

48

—

Linear Pout

2.5 GHz, OFDM, QAM-64,54Mbps, EVM=2.5%

3.0 V

3.3 V

5.0 V

dBm

dBm

dBm

—

—

—

22.5

24.0

28.5

—

—

—

P1dB

—

dBm

—

28

—

Trise, Tfall

10% to 90% RF and 90% to 10% RF

nS

—

35

—

Ton, Toff

50% control to 90% RF, 50% control to 10% RF

nS

—

40

—

Transients

—

mV

—

10

—

Current

µA

—

5

10

4. For positive voltage control, external DC blocking capacitors are required on all RF ports.

5. Insertion Loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 MHz – 1.0 GHz, 39 pF for 0.5 - 3.0 GHz.

† Reference Application Note M538 for lead-free solder reflow

recommendations.

Meets JEDEC moisture sensitivity level 1 requirements.