GaAs SPDT 2.5 V High Power Switch

DC - 3.0 GHz

Rev. V2

MASWSS0181

2

2

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2

3

Parameter

Test Conditions

Units

Min.

Typ.

Max.

DC – 1 GHz

1 – 2 GHz

2 - 3 GHz

dB

dB

dB

—

—

—

0.40

0.50

0.75

0.65

—

—

Isolation

DC – 1 GHz

1 – 2 GHz

2 - 3 GHz

dB

dB

dB

23.0

—

—

26

20

16

—

—

—

Return Loss

DC – 2 GHz

2 - 3 GHz

dB

dB

—

—

20

16

—

—

IP3

Two Tone, +26 dBm/tone, 5 MHz Spacing

> 50 MHz

dBm

—

57

—

P0.1dB

—

dBm

—

39

—

dBc

—

-75

—

dBc

—

-75

-67

Trise, Tfall

10% to 90% RF, 90% to 10% RF

µS

—

0.04

—

Ton, Toff

50% control to 90% RF, and 50% control to 10% RF

µS

—

0.06

—

Transients

In Band

mV

—

50

—

Control Current

µA

—

—

50

3. For positive voltage control, external DC blocking capacitors are required on all RF ports.

4. Insertion loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 MHz - 500 MHz, 100 pF for 0.5 GHz - 3 GHz.

Qualification

Qualified to M/A-COM specification REL-201,

Process Flow –2.

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive

to electrostatic discharge (ESD) and can be

damaged by static electricity. Proper ESD control

techniques should be used when handling these

devices.

V1

V2

ANT– RF1

ANT - RF2

1

0

On

Off

0

1

Off

On

5.

Differential voltage, V(state 1) - V(state 0), must be +2.5 V

minimum and must not exceed +8 V.

6.

0 = -5 V to 2.5 V, 1 = -2.5 V to +5 V