High Power GaAs DPDT Diversity Switch

DC - 4.0 GHz

Rev. V1

MASWSS0184

3

3

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3

Evaluation Board for 3 mm 12-Lead PQFN

C4

C3

C1

C2

U1

C4

C3

C1

C2

U1

7.

Differential voltage, V (state 1) - V (state 0), must be

+2.7 V minimum and must not exceed 8.0 V.

8.

1 = +2.9 V to +8 V, 0 = 0 V + 0.2 V.

Control

Control

ANT 1

- Rx

ANT 1

- Tx

ANT 2

- Tx

ANT 2

- Rx

1

0

On

Off

On

Off

0

1

Off

On

Off

On

5. Exceeding any one or combination of these limits may cause

permanent damage to this device.

6. M/A-COM does not recommend sustained operation near

these survivability limits.

Parameter

Absolute

Maximum

Input Power @ 3 V Control

+35 dBm CW

Input Power @ 5 V Control

+37 dBm CW

Voltage

 8 volts

Operating Temperature

Storage Temperature

Qualification

Qualified to M/A-COM specification REL-201,

Process Flow –2.

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive

to electrostatic discharge (ESD) and can be

damaged by static electricity. Proper ESD control

techniques should be used when handling these

devices.

Application Schematic

GND

GND

GND

Vc2

Vc1

GND

C1

C2

C3

C4

C1 = C2 = C3 = C4 = 39 pF