HMIC™ Silicon PIN Diode Switches

Rev. V10

MA4SWx10 Series

2

2

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

2

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Insertion Loss

6 GHz

13 GHz

20 GHz

dB

—

0.4

0.5

0.7

0.7

0.9

1.2

Isolation

6 GHz

13 GHz

20 GHz

dB

46

39

34

55

47

42

—

Input Return Loss

6 GHz

13 GHz

20 GHz

dB

22

15

14

31

33

27

—

—

ns

—

50

—

—

V

—

—

50

Signal Compression

500 mW, 1 GHz

dB

—

0.2

—

1. Typical switching speed is measured from (10% to 90% and 90% to 10% of detected RF voltage), driven by TTL compatible drivers. In the

modulating state, (the switching port is modulating, all other ports are in steady state isolation.) The switching speed is measured using an

state current, is typically 10:1.

2. Maximum reverse leakage current in either the shunt or series PIN diodes shall be 10 µA maximum at -50 volts.

MA4SW110 (SPST)

MA4SW210 (SPDT)

MA4SW310 (SP3T)

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Insertion Loss

6 GHz

13 GHz

20 GHz

dB

—

0.4

0.5

0.7

0.7

1.0

1.2

Isolation

6 GHz

13 GHz

20 GHz

dB

48

40

34

63

50

42

—

Input Return Loss

6 GHz

13 GHz

20 GHz

dB

20

18

15

27

25

25

—

—

ns

—

50

—

—

V

—

—

50

Signal Compression

500 mW, 1 GHz

dB

—

0.2

—

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Insertion Loss

6 GHz

13 GHz

20 GHz

dB

—

0.5

0.7

0.9

0.8

1.1

1.5

Isolation

6 GHz

13 GHz

20 GHz

dB

49

42

33

57

48

42

—

Input Return Loss

6 GHz

13 GHz

20 GHz

dB

20

14

11

24

22

21

—

—

ns

—

50

—

—

V

—

—

50

Signal Compression

500 mW, 1 GHz

dB

—

0.2

—