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PDRV5013FAQDBZR 数据表(PDF) 13 Page - Texas Instruments

部件名 PDRV5013FAQDBZR
功能描述  Digital-Latch Hall Effect Sensor
PDF  28 Pages
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

PDRV5013FAQDBZR 数据表(HTML) 13 Page - Texas Instruments

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background image
ref
ref
V
max
V
min
R1
30 mA
100 µA
d
d
VCC
BOP
BRP
t (s)
B (mT)
t (s)
t (s)
OUT
Valid Output
td
ton
13
DRV5013
www.ti.com
SLIS150E – MARCH 2014 – REVISED FEBRUARY 2016
Product Folder Links: DRV5013
Submit Documentation Feedback
Copyright © 2014–2016, Texas Instruments Incorporated
Feature Description (continued)
Figure 16. Case 4: Power On When BRP < B < BOP, Followed by B < BRP
7.3.4 Output Stage
The DRV5013 output stage uses an open-drain NMOS, and it is rated to sink up to 30 mA of current. For proper
operation, calculate the value of the pullup resistor R1 using Equation 1.
(1)
The size of R1 is a tradeoff between the OUT rise time and the current when OUT is pulled low. A lower current
is generally better, however faster transitions and bandwidth require a smaller resistor for faster switching.
In addition, ensure that the value of R1 > 500
Ω to ensure the output driver can pull the OUT pin close to GND.
NOTE
Vref is not restricted to VCC. The allowable voltage range of this pin is specified in the
Absolute Maximum Ratings.



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