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BAS35 数据表(PDF) 1 Page - Olitech Electronics Co.Ltd |
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BAS35 数据表(HTML) 1 Page - Olitech Electronics Co.Ltd |
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1 / 3 page ![]() Email: info@olitech-elec.com Website: www.olitech-elec.com BAS35 Silicon Epitaxial Planar Switching Diode Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applications • Ultra high speed switching application Absolute Maximum Ratings (Ta = 25℃) Page 1 of 3 Parameter Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 85 V Continuous Reverse Voltage VR 75 V Forward Current (DC) Single Diode Loaded Double Diode Loaded IF 215 125 mA Repetitive Peak Forward Current IFRM 450 mA Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 μs IFSM 0.5 1 4 A Power Dissipation Ptot 350 mW Operating Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg - 65 to + 150 ℃ 3 1 2 Marking Code: A3 SOT-23 Plastic Package |
类似零件编号 - BAS35 |
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类似说明 - BAS35 |
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