MMBT2907 datasheet(2/2 Pages) DIOTEC

2 / 2 page

1) Tested with pulses t

p = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm

2 Kupferbelag (Lötpad) an jedem Anschluß

Switching Transistors

MMBT2907, MMBT2907A

Characteristics (T

j = 25°C)

Kennwerte (T

j = 25°C)

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis

- V

CE = 10 V, - IC = 0.1 mA

MMBT2709

MMBT2709A

–

- V

CE = 10 V, - IC = 1 mA

MMBT2709

MMBT2709A

100

–

- V

CE = 10 V, - IC = 10 mA

MMBT2709

MMBT2709A

100

–

- V

CE = 10 V, - IC = 500 mA

MMBT2709

MMBT2709A

–

- V

CE = 10 V, - IC = 150 mA

100

–

300

Gain-Bandwidth Product – Transitfrequenz

- V

CE = 20 V, - IC = 50 mA, f = 100 MHz

200 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- V

CB = 10 V, IE = ie = 0, f = 1 MHz

CB0

–

8 pF

Emitter-Base Capacitance – Emitter-Basis-Kapazität

- V

EB = 2 V, IC = ic = 0, f = 1 MHz

EB0

–

30 pF

Noise figure – Rauschzahl

- V

CE = 10 V, - IC = 100 µA, RS = 1 kΩ,

f = 10 Hz...15.7 kHz

–

4 dB

–

Switching times – Schaltzeiten

turn-on time

- V

CC = 30 V, - VBE = 1.5 V

- I

C = 150 mA, - IB1 = 15 mA

–

45 ns

delay time

–

10 ns

rise time

–

40 ns

turn-off time

- V

CC = 30 V, - IC = 150 mA

- I

B1 = - IB2 =15 mA

off

–

100 ns

storage time

–

80 ns

fall time

–

30 ns

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

thA

420 K/W

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

MMBT2222, MMBT2222A

Marking - Stempelung

MMBT2907A = 2F MMBT2907 = (M)2B

MMBT2907 数据表(PDF) 2 Page - Diotec Semiconductor

MMBT2907 数据表(HTML) 2 Page - Diotec Semiconductor

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MMBT2907 数据表(PDF) 2 Page - Diotec Semiconductor

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