2SA651 datasheet(2/2 Pages) ISC

部件名	2SA651

功能描述	Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.)

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2SA651

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CBO

Collector-Base Breakdown Voltage

IC= -1mA; IE= 0

-200

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -25mA; IB= 0

-150

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -1mA; IC= 0

-5

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -5A; IB= -0.5A

-2.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= -5A; IB= -0.5A

-2.5

ICBO

Collector Cutoff Current

VCB= -200V; IE= 0

-0.1

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-0.1

hFE

DC Current Gain

IC= -2A; VCE= -5V

150

COB

Collector Output Capacitance

IE=0; VCB= -5V; f= 1MHz

500

Current-Gain

—Bandwidth Product

IC= -0.5A; VCE= -10V

MHz

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