2SA652 datasheet(1/2 Pages) ISC

部件名	2SA652

功能描述	Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.)

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

标志

1 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc Silicon PNP Power Transistor

2SA652

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -100V(Min.)

·Contunuous Collector Current IC= -1A

·Power DissipationPC= 15W @TC= 25℃

APPLICATIONS

·Designed for low frequency power amplifier color TV vertical

deflection output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-150

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-1.0

A

PC

Collector Power Dissipation@TC=25℃

15

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

类似零件编号 - 2SA652

制造商	部件名	数据表	功能描述
New Jersey Semi-Conduct...	2SA652	129Kb / 2P	Silicon PNP Power Transistor

More results

类似说明 - 2SA652

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	2SA1080	98Kb / 2P	Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.)
	3DD101A	191Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 100V(Min.)
	3DD15B	190Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 100V(Min.)
	3DD325	195Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 50V(Min)
	3DD15	190Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 100V(Min.)
	3DD7B	191Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 100V(Min)
	3DD8B	190Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 50V(Min)
	BD954	194Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= -100V(Min)
	BUY55	192Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 125V(Min.)
	BUY77	194Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO = 250V(Min.)