2SB526 datasheet(2/2 Pages) ISC

部件名	2SB526

功能描述	Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min)

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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isc Silicon PNP Power Transistor

2SB526

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -10mA; RBE= ∞

-80

V(BR)CBO

Collector-Base Breakdown Voltage

IC= -1mA; IE= 0

-90

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -1mA; IC= 0

-5

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -0.3A; IB= -30mA

-1.0

VBE(on)

Base-Emitter On Voltage

IC= -50mA; VCE= -4V

0.7

ICEO

Collector Cutoff Current

VCE= -80V; RBE= ∞

-1

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-10

μ A

hFE

DC Current Gain

IC= -0.3A; VCE= -4V

300

 h

FE Classifications

55-110

90-180

150-300

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