2SB897 datasheet(1/2 Pages) ISC

部件名	2SB897

功能描述	High DC Current Gain- : hFE = 1000(Min)@ IC= -10A

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

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1

isc Silicon PNP Darlington Power Transistor

2SB897

DESCRIPTION

·High DC Current Gain-

: hFE = 1000(Min)@ IC= -10A

·Low Collector Saturation Voltage-

: VCE(sat) = -1.5V(Max.) @IC= 10A

·Complement to Type 2SD1210

APPLICATIONS

·Designed for audio frequency power amplifier and low

speed high current switching industrial use.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-8

V

IC

Collector Current-Continuous

-10

A

ICM

Collector Current-Peak

-15

A

IB

Base Current- Continuous

-0.5

A

PC

Collector Power Dissipation

@TC=25℃

80

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

类似零件编号 - 2SB897

制造商	部件名	数据表	功能描述
New Jersey Semi-Conduct...	2SB897	124Kb / 2P	Silicon PNP Darlington Power Transistor

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类似说明 - 2SB897

制造商	部件名	数据表	功能描述
Samsung semiconductor	TIP105	262Kb / 6P	PNP (HIGH DC CURRENT GAIN MIN
MAKO SEMICONDUCTOR CO.,...	2SC1623	107Kb / 2P	High DC current gain hFE 200(Typ)VCE 6V, IC 1mA
Inchange Semiconductor ...	2SB1531	101Kb / 2P	High DC Current Gain- : hFE= 5000(Min)@IC= -5A
	2SB881	102Kb / 2P	High DC Current Gain- : hFE = 2000(Min)@ IC= -3.5A
	2SB882	102Kb / 2P	High DC Current Gain- : hFE = 2000(Min)@ IC= -5A
	2SB883	84Kb / 2P	High DC Current Gain- : hFE = 2000(Min)@ IC= -7A
	2SB955	101Kb / 2P	High DC Current Gain- : hFE = 1000(Min)@ IC= -5A
	2N4908	104Kb / 2P	DC Current Gain-: hFE= 20-80 @IC= -4A
	2N4907	104Kb / 2P	DC Current Gain-: hFE= 20-80 @IC= -4A
SHIKUES Electronics	BC846	1,020Kb / 4P	High current gain, Excellent hFE Linearity