8N80 datasheet(1/2 Pages) ISC

部件名	8N80

功能描述	Drain Current ?밒D= 8A@ TC=25C

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

1

isc N-Channel Mosfet Transistor

8N80

·

FEATURES

·

Drain Current –ID= 8A@ TC=25℃

·

Drain Source Voltage-

: VDSS=800V(Min)

·

Static Drain-Source On-Resistance

: RDS(on) = 1.55Ω(Max)

·

Avalanche Energy Specified

·

Fast Switching

·

Simple Drive Requirements

·

DESCRITION

·

Designed for high efficiency switch mode power supply.

·

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

800

V

VGS

Gate-Source Voltage-Continuous

±

30

V

ID

Drain Current-Continuous

8

A

IDM

Drain Current-Single Plused

32

A

PD

Total Dissipation @TC=25℃

178

W

Tj

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

类似零件编号 - 8N80

制造商	部件名	数据表	功能描述
Unisonic Technologies	8N80	185Kb / 5P	800V N-CHANNEL MOSFET
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