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LL4150 数据表(PDF) 1 Page - Nanjing International Group Co |
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LL4150 数据表(HTML) 1 Page - Nanjing International Group Co |
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1 / 1 page ![]() LL4150 Silicon Epitaxial Planar Switching Diode Features • Fast switching speed • High reliability • High conductance • For general purpose switching applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Non-Repetitive Peak Reverse Voltage VRM 50 V Average Rectified Forward Current IF(AV) 200 mA Forward Continuous Current IFM 300 mA Power Dissipation Ptot 500 mW Junction temperature Tj 175 O C Storage Temperature Range Tstg - 65 to +175 O C Characteristics at Ta = 25 OC Parameter Symbol Max. Unit Forward Voltage at IF = 200 mA VF 1.2 V Reverse Current at VR = 50 V IR 100 nA Reverse Recovery Time at IF = IR = 10 to 200 mA, to 0.1 IF trr 4 ns LL-34 |
类似零件编号 - LL4150 |
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类似说明 - LL4150 |
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