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BAT54SW 数据表(PDF) 1 Page - Diotec Semiconductor

部件名 BAT54SW
功能描述  Surface mount Schottky-Barrier Double-Diodes
PDF  2 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  DIOTEC [Diotec Semiconductor]
网页  http://www.diotec.com
标志 DIOTEC - Diotec Semiconductor

BAT54SW 数据表(HTML) 1 Page - Diotec Semiconductor

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BAT54W
BAT54W
Surface Mount Schottky-Barrier Double-Diodes
Schottky-Barrier Doppel-Dioden für die Oberflächenmontage
Version 2014-08-21
Dimensions - Maße [mm]
Power dissipation – Verlustleistung 1)
200 mW 2)
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
30 V
Plastic case
Kunststoffgehäuse
SOT-323
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
per diode / pro Diode
BAT54W-series
Max. average forward current – Dauergrenzstrom (dc)
IFAV
200 mA 2)
Repetitive peak forward current – Periodischer Spitzenstrom
IFRM
300 mA 2)
Non repetitive peak forward surge current
Stoßstrom-Grenzwert
Tp ≤ 10 ms
Tp ≤ 5 µs
IFSM
IFSM
1 A
8 A
Repetitive peak reverse voltage – Periodische Spitzensperrspannung
VRRM
30 V
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
125° C
-55…+150°
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Forward voltage
Durchlass-Spannung
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IF = 30 mA
IF = 100 mA
VF
VF
VF
VF
VF
< 240 mV
< 320 mV
< 400 mV
< 500 mV
< 650 mV
Leakage current – Sperrstrom 3)
VR = 25 V
VR = 30 V
IR
IR
< 2 µA
< 3 µA
Max. junction capacitance – Max. Sperrschichtkapazität
VR = 1 Vdc , f = 100 kHz … 1 MHz
CT
10 pF
Reverse recovery time – Sperrverzug
IF = 10 mA über/through IR = 10 mA bis/to IR = 1 mA
trr
< 5 ns
Critical rate of rise of voltage –
Kritische Spannungsanstiegsgeschwindigkeit
dv/dt
10000 V/µs
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
620 K/W 4)
1
Total power dissipation of both diodes − Summe der Verlustleistungen beider Dioden
2
Mounted on P.C. board with 25 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss
3
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
4
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
1
1.3
0.3
1±0.1
2±0.1
Type
Code
3
2
1


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