7

01.11.2003

General Purpose Transistors

BC 817 / BC 818

Characteristics, T

Kennwerte, T

Min.

Typ.

Max.

Collector saturation voltage – Kollektor-Sättigungsspg.

I

V

CEsat

–

–

0.7 V

Base saturation voltage – Basis-Sättigungsspannung

I

V

BEsat

–

–

1.3 V

Base-Emitter voltage – Basis-Emitter-Spannung

V

V

BE

–

–

1.2 V

Collector-Base cutoff current – Kollektorreststrom

I

I

CB0

–

–

100 nA

I

CB0

––

5

Emitter-Base cutoff current – Emitterreststrom

I

I

EB0

–

–

100 nA

Gain-Bandwidth Product – Transitfrequenz

V

f

T

–

100 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

V

C

CB0

–

12 pF

–

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

R

thA

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BC 807 / BC 808

Marking of available current gain

groups per type

Stempelung der lieferbaren Strom-

verstärkungsgruppen pro Typ

BC 817-16 = 6A BC 817-25 = 6B BC 817-40 = 6C

BC 817 = 6D

BC 818-16 = 6E BC 818-25 = 6F

BC 818-40 = 6G

BC 818 = 6H