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ADA4571WHRZ-R7 数据表(PDF) 5 Page - Analog Devices |
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ADA4571WHRZ-R7 数据表(HTML) 5 Page - Analog Devices |
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5 / 21 page ![]() Data Sheet ADA4571 Rev. 0 | Page 5 of 21 Product Overview Online Documentation Design Resources Discussion Sample & Buy ADA4571B −40°C ≤ TA ≤ +125°C, VDD = 2.7 V to 5.5 V, CL = 10 nF to GND, RL = 200 kΩ to GND; angle inaccuracies referred to homogenous magnetic field of 25 kA/m; output signals and offset voltages are related to the common-mode level of VDD/2, unless otherwise stated. Table 3. Parameter Symbol Test Conditions/Comments Min Typ Max Unit ANGULAR PERFORMANCE Angle Measurement Range 0 180 Degrees Uncorrected Angular Error1 αUNCORR TA = −40°C ±3 Degrees TA = 25°C ±3 Degrees TA = 125°C ±4 Degrees Single Point Calibration Angular Error2, 3 αCAL TA = −40°C to +125°C, GC = GND ±0.5 Degrees TA = −40°C to +125°C, GC = VDD ±0.5 Degrees Dynamic Angular Error4 αDYNAMIC TA = −40°C to +125°C, rotation frequency = 2000 rpm 0.1 ±0.4 Degrees Angular Inaccuracy3, 5 ∆α After end of line (EOL) calibration for offset voltage error and amplitude synchronism at TA = −40°C to +125°C (only 180° range) 0.05 Degrees OUTPUT PARAMETERS Amplitude VAMP GC = GND TA = −40°C 63 75 % VDD TA = 25°C 41 53 % VDD TA = 125°C 21 33 % VDD GC = VDD TA = −40°C 56 77 % VDD TA = 25°C 52 72 % VDD TA = 125°C 38 57 % VDD Output Voltage Range VO_SWING VSIN and VCOS, normal operation 7 93 % VDD Output Voltage Low VOL VSIN or VCOS, broken bond wire detected 3.75 % VDD Output Referred Offset Voltage VOFFSET GC = VDD 3.75 % VDD GC = GND 3.75 % VDD Amplitude Synchronism Error6 k −0.75 +0.75 % peak Delay Time tDEL Rotation frequency = 30,000 rpm 2 µs Phase Error7 ΦERR Rotation frequency = 30,000 rpm 0.8 Degrees Orthogonality Error3 OE 0.05 Degrees Output Noise VNOISE BW = 80 kHz, RTO 500 µV rms Output Series Resistance RO Normal operation, PD = GND 50 Ω PD = VDD 63 kΩ Output −3 dB Cutoff Frequency3 f−3dB Amplifier BW, CL = 10 pF 100 kHz Power Supply Rejection3 PSRR Measured as output variation from VDD/2, VDD = 2.7 V to 5.5 V, RL = 200 kΩ to GND, GC = GND or VDD 80 dB Output Short-Circuit Current ISC Short to GND per pin (VSIN, VCOS) 15 20 mA Short to VDD per pin (VSIN, VCOS) −15 −18 mA Sensitivity SEN α = 0° and 135°, TA = 25°C 52 mV/° POWER SUPPLY Supply Voltage VDD 2.7 5.5 V Quiescent Supply Current ISY PD = GND, GC = GND, no load 3.5 4.5 6 mA PD = GND, GC = VDD 6.5 mA PD = VDD, no load 12.5 µA Power-Up Time tPWRUP To 98% of desired output level after VDD was reached 150 µs To 98% of desired output level after PD cycling 100 µs |
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