BFS20 datasheet(2/2 Pages) DIOTEC

2 / 2 page

1) Tested with pulses t

p = 300

:s, duty cycle # 2% – Gemessen mit Impulsen t

p = 300

:s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

High Frequency Transistors

BFS 20

Characteristics (T

j = 25

/C)

Kennwerte (T

j = 25

/C)

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis 1)

CE = 10 V, IC = 7 mA

–

Base-Emitter voltage – Basis-Emitter-Spannung 1)

CE = 10 V, IC = 7 mA

BEon

–

740 mV

900 mV

Gain-Bandwidth Product – Transitfrequenz

CE = 10 V, IC = 5 mA, f = 100 MHz

275 MHz

450 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

CB = 10 V, IE = ie = 0, f = 1 MHz

CB0

–

1 pF

–

Feedback Capacitance – Rückwirkungskapazität

CB = 10 V, IC = ic = 0, f = 1 MHz

–

350 fF

–

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

thA

420 K/W 2)

Marking - Stempelung

BFS 20 = G1

BFS20 数据表(PDF) 2 Page - Diotec Semiconductor

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BFS20 数据表(PDF) 2 Page - Diotec Semiconductor

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