2SA1507 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

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isc & iscsemi is registered trademark

isc Silicon PNP Power Transistor

2SA1507

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CBO

Collector-Base Breakdown Voltage

IC= -10μ A; IE= 0

180

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -1mA; RBE= ∞

160

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -10μ A; IC= 0

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -500mA; IB= -50mA

-0.5

VBE(sat)

Base-Emitter Saturation Voltage

IC= -500mA; IB= -50mA

-1.2

ICBO

Collector Cutoff Current

VCB= -120V; IE= 0

-0.1

μ A

IEBO

Emitter Cutoff Current

VEB= -4V; IC= 0

-0.1

μ A

hFE-1

DC Current Gain

IC= -100mA; VCE= -5V

100

400

hFE-2

DC Current Gain

IC= -10mA; VCE= -5V

Current-Gain

—Bandwidth Product

IC= -50mA ; VCE= -10V

120

MHz

COB

Output Capacitance

IE= 0; VCB= -10V; f= 1.0MHz

Switching Times

ton

Turn-on Time

IC= -0.7A ,RL= 14.3Ω ,

IB1= -IB2= -70mA,VCC= -100V;

PW= 20μ s; Duty Cycle≤1%

0.04

μ s

tstg

Storage Time

0.7

μ s

Fall Time

0.04

μ s

 h

FE-1 Classifications

100-200

140-280

200-400

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