2SA1606 datasheet(2/2 Pages) ISC

2 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

isc Silicon PNP Power Transistor

2SA1606

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CBO

Collector-Base Breakdown Voltage

IC= -1mA; IE= 0

180

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -1mA; RBE= ∞

160

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -1mA; IC= 0

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -500mA; IB= -50mA

-0.5

VBE(on)

Base-Emitter On Voltage

IC= -10mA; VCE= -5V

-1.5

ICBO

Collector Cutoff Current

VCB= -120V; IE= 0

-10

μ A

IEBO

Emitter Cutoff Current

VEB= -4V; IC= 0

-10

μ A

hFE

DC Current Gain

IC= -300mA; VCE= -5V

200

Current-Gain

—Bandwidth Product

IC= -50mA ; VCE= -10V

100

MHz

COB

Output Capacitance

IE= 0; VCB= -10V; f= 1.0MHz

Switching Times

ton

Turn-on Time

IC= -0.5A, RL= 40Ω ,

IB1= -IB2= -50mA, VCC= -20V;

PW= 20μ s

0.29

μ s

tstg

Storage Time

0.48

μ s

Fall Time

0.19

μ s

 h

FE Classifications

60-120

100-200

2SA1606 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

2SA1606 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2

数据表下载

链接网址

2SA1606 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

2SA1606 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2

数据表 下载

链接网址

数据表下载