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2N2222 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 2N2222
功能描述  Complement to Type 2N2907
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

2N2222 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  2N2222 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2N2222 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Website：www.iscsemi.cn
isc Silicon NPN Power Transistor
2N2222
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V(BR) CEO
Collector-Emitter Breakdown Voltage
IC=10mA ; IB=0
30
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE=10μA ; IC=0
5
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 150mA; IB= 15mA
0.4
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 500mA; IB= 50mA
1.6
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 150mA; IB= 15mA
1.3
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 500mA; IB= 50mA
2.6
V
ICBO
Collector Cutoff Current
VCB= 50V; IE=0
1.5
uA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
50
nA
hFE-1
DC Current Gain
IC= 0.1mA ; VCE= 10V
35
hFE-2
DC Current Gain
IC= 1mA ; VCE= 10V
50
hFE-3
DC Current Gain
IC= 10mA ; VCE= 10V
75
hFE-4
DC Current Gain
IC= 150mA ; VCE= 10V
100
300
hFE-5
DC Current Gain
IC= 500mA ; VCE= 10V
30
fT
Current Gain-Bandwidth Product
IC= 20mA ; VCE= 20V;ftest= 100MHz
250
MHz
COB
Output Capacitance
IE= 0 ; VCB= 10V; ftest= 1.0MHz
8
pF
Switching Times
td
Delay Time
IC= 150mA; IB1= -IB2= 15mA
10
ns
tr
Rise Time
25
ns
tstg
Storage Time
200
ns
tf
Fall Time
60
ns



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