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ADR3512WCRMZ-R7 数据表(PDF) 13 Page - Analog Devices

部件名 ADR3512WCRMZ-R7
功能描述  Micropower, High Accuracy Voltage Reference
PDF  16 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADR3512WCRMZ-R7 数据表(HTML) 13 Page - Analog Devices

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Data Sheet
ADR3512
Rev. E | Page 13 of 16
THEORY OF OPERATION
The ADR3512 uses a patented voltage reference architecture to
achieve high accuracy, low TC, and low noise in a CMOS
process. Like all band gap references, the reference combines
two voltages of opposite TCs to create an output voltage that is
nearly independent of ambient temperature. However, unlike
traditional band gap voltage references, the temperature
independent voltage of the reference is arranged to be the base
emitter voltage, VBE, of a bipolar transistor at room temperature
rather than the VBE extrapolated to 0 K (the VBE of a bipolar
transistor at 0 K is approximately VG0, the band gap voltage of
the silicon). Then, a corresponding positive TC voltage is added
to the VBE voltage to compensate for its negative TC.
The key benefit of this technique is that the trimming of the
initial accuracy and TC can be performed without interfering
with one another, thereby increasing overall accuracy across
temperature. Curvature correction techniques further reduce
the temperature variation.
The band gap voltage (VBG) is then buffered and amplified to
produce stable output voltages of 2.5 V and 5.0 V. The output buffer
can source up to +10 mA and sink up to −3 mA of load current.
BAND GAP
VOLTAGE
REFERENCE
ENABLE
GND FORCE
VOUT FORCE
VOUT SENSE
RFB2
RFB1
VIN
VBG
GND SENSE
Figure 36. Block Diagram
The ADR3512 reference leverages Analog Devices patented
DigiTrim technology to achieve high initial accuracy and low
TC. Precision layout techniques lead to very low long-term drift
and thermal hysteresis.
LONG-TERM OUTPUT VOLTAGE DRIFT
One of the key parameters of the ADR3512 reference is long-term
output voltage drift. Independent of the output voltage model
and in a 50°C environment, this device exhibits a typical drift
of approximately 30 ppm after 1000 hours of continuous, unloaded
operation.
It is important to understand that long-term output voltage drift
is not tested or guaranteed by design and that the output from the
device may shift beyond the typical 30 ppm specification. Because
most of the drift occurs in the first 200 hours of device operation,
burning in the system board with the reference mounted can
reduce subsequent output voltage drift over time. See the
AN-713 Application Note, The Effect of Long-Term Drift on Voltage
References, for more information regarding the effects of long-term
drift and how it can be minimized.
POWER DISSIPATION
The ADR3512 voltage reference is capable of sourcing up to 10 mA
of load current at room temperature across the rated input voltage
range. However, when used in applications subject to high ambient
temperatures, carefully monitor the input voltage and load current
to ensure that the device does not exceed its maximum power
dissipation rating. The maximum power dissipation of the
device can be calculated by
]
W
[
JA
A
J
D
T
T
P
θ
=
where:
PD is the device power dissipation.
TJ is the device junction temperature.
TA is the ambient temperature.
θJA is the package (junction to air) thermal resistance.
Because of this relationship, the acceptable load current in high
temperature conditions may be less than the maximum current
sourcing capability of the device. The device must not be operated
outside of its maximum power rating because doing so can
result in premature failure or permanent damage to the device.



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