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ADR3512WCRMZ-R7 数据表(PDF) 13 Page - Analog Devices |
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ADR3512WCRMZ-R7 数据表(HTML) 13 Page - Analog Devices |
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13 / 16 page ![]() Data Sheet ADR3512 Rev. E | Page 13 of 16 THEORY OF OPERATION The ADR3512 uses a patented voltage reference architecture to achieve high accuracy, low TC, and low noise in a CMOS process. Like all band gap references, the reference combines two voltages of opposite TCs to create an output voltage that is nearly independent of ambient temperature. However, unlike traditional band gap voltage references, the temperature independent voltage of the reference is arranged to be the base emitter voltage, VBE, of a bipolar transistor at room temperature rather than the VBE extrapolated to 0 K (the VBE of a bipolar transistor at 0 K is approximately VG0, the band gap voltage of the silicon). Then, a corresponding positive TC voltage is added to the VBE voltage to compensate for its negative TC. The key benefit of this technique is that the trimming of the initial accuracy and TC can be performed without interfering with one another, thereby increasing overall accuracy across temperature. Curvature correction techniques further reduce the temperature variation. The band gap voltage (VBG) is then buffered and amplified to produce stable output voltages of 2.5 V and 5.0 V. The output buffer can source up to +10 mA and sink up to −3 mA of load current. BAND GAP VOLTAGE REFERENCE ENABLE GND FORCE VOUT FORCE VOUT SENSE RFB2 RFB1 VIN VBG GND SENSE Figure 36. Block Diagram The ADR3512 reference leverages Analog Devices patented DigiTrim technology to achieve high initial accuracy and low TC. Precision layout techniques lead to very low long-term drift and thermal hysteresis. LONG-TERM OUTPUT VOLTAGE DRIFT One of the key parameters of the ADR3512 reference is long-term output voltage drift. Independent of the output voltage model and in a 50°C environment, this device exhibits a typical drift of approximately 30 ppm after 1000 hours of continuous, unloaded operation. It is important to understand that long-term output voltage drift is not tested or guaranteed by design and that the output from the device may shift beyond the typical 30 ppm specification. Because most of the drift occurs in the first 200 hours of device operation, burning in the system board with the reference mounted can reduce subsequent output voltage drift over time. See the AN-713 Application Note, The Effect of Long-Term Drift on Voltage References, for more information regarding the effects of long-term drift and how it can be minimized. POWER DISSIPATION The ADR3512 voltage reference is capable of sourcing up to 10 mA of load current at room temperature across the rated input voltage range. However, when used in applications subject to high ambient temperatures, carefully monitor the input voltage and load current to ensure that the device does not exceed its maximum power dissipation rating. The maximum power dissipation of the device can be calculated by ] W [ JA A J D T T P θ − = where: PD is the device power dissipation. TJ is the device junction temperature. TA is the ambient temperature. θJA is the package (junction to air) thermal resistance. Because of this relationship, the acceptable load current in high temperature conditions may be less than the maximum current sourcing capability of the device. The device must not be operated outside of its maximum power rating because doing so can result in premature failure or permanent damage to the device. |
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