2SB1284 datasheet(2/2 Pages) ISC

部件名	2SB1284

功能描述	Collector-Emitter Sustaining Voltage-: VCEO(SUS)= -100V(Min.)

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 2 page

INCHANGE Semiconductor

Product Specification

isc website：www.iscsemi.cn

isc Silicon PNP Darlingtion Power Transistor

2SB1284

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -5A; IB= -10mA

-1.5

VBE(sat)

Base-Emitter Saturation Voltage

IC= -5A; IB= -10mA

-2.0

ICBO

Collector Cutoff Current

VCB= -100V; IE= 0

-100

μA

ICEO

Collector Cutoff Current

VCE= -100V; IB= 0

-100

μA

IEBO

Emitter Cutoff Current

VEB= -7V; IC= 0

-5

hFE

DC Current Gain

IC= -5A; VCE= -3V

1500

15000

Current-Gain—Bandwidth Product

IC= -1A; VCE= -10V

MHz

Switching times

ton

Turn-on Time

IC= -5A, IB1= -IB2= -10mA,

RL= 6Ω, VBB2= -4V

1.0

μs

tstg

Storage Time

4.0

μs

Fall Time

2.0

μs

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