2SC3422 datasheet(1/2 Pages) ISC

部件名	2SC3422

功能描述	Good Linearity of hFE

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc Silicon NPN Power Transistor

2SC3422

DESCRIPTION

·Collector-Emitter Breakdown Voltage

: V(BR)CEO= 40V(Min)

·Good Linearity of hFE

·Complement to Type 2SA1359

APPLICATIONS

·Audio frequency power amplifier

·Low speed switching

·Suitable for output stage of 5 watts car radio and car stereo

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

40

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

3

A

IB

Base Current-Continuous

1

A

PC

Collector Power Dissipation

@ TC=25℃

10

W

Collector Power Dissipation

@ Ta=25℃

1.5

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

类似零件编号 - 2SC3422

制造商	部件名	数据表	功能描述
Toshiba Semiconductor	2SC3422	151Kb / 2P	NPN EPITAXIAL TYPE (AUDIO FREQUENCY POWER AMPLIFIER, LOW SPEED SWITCHING)
Foshan Blue Rocket Elec...	2SC3422	423Kb / 6P	Silicon NPN transistor in a TO-126F Plastic Package.
Toshiba Semiconductor	2SC3422	120Kb / 4P	Silicon NPN Epitaxial Type (PCT Process) Audio Frequency Power Amplifier

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