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65N06 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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65N06 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc websit e: : : : www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor 65N06 FEATURES · · · ·Drain Current –ID=63A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.018Ω(Max) DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ABSOLUTE MAXIMUM RATINGS(Ta=25℃ ℃ ℃ ℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 63 A IDM Drain Current-Single Plused 240 A PD Total Dissipation @TC=25℃ 150 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.05 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W |
类似零件编号 - 65N06 |
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类似说明 - 65N06 |
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