2SB565 datasheet(2/2 Pages) ISC

部件名	2SB565

功能描述	Collector-Emitter Breakdown Voltage-: V(BR)CEO= -50V(Min)

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 2 page

INCHANGE Semiconductor

isc Product Specification

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isc Silicon PNP Power Transistor

2SB565

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -30mA; RBE= ∞

-50

V(BR)CBO

Collector-Base Breakdown Voltage

IC= -10μ A; IE= 0

-50

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -10μ A; IC= 0

-4

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -2A; IB= -0.2A

-1.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= -2A; IB= -0.2A

-1.2

ICBO

Collector Cutoff Current

VCB= -50V ; IE= 0

-1

μ A

hFE-1

DC Current Gain

IC= -1A; VCE= -4V

200

hFE-2

DC Current Gain

IC= -0.1A; VCE= -4V

Current-Gain

—Bandwidth Product

IC= -0.5A; VCE= -4V

MHz

Switching Times

ton

Turn-on Time

VCC= -10.5V, IB1= -IB2= -50mA,

IC= -0.5A

0.3

μ s

tstg

Storage Time

2.5

μ s

toff

Turn-off Time

3.0

μ s

 h

FE-1 Classifications

60-120

100-200

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