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2SB682 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 2SB682
功能描述  High Power Dissipation
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

2SB682 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SB682 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SB682 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：
www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc Silicon PNP Power Transistor
2SB682
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -10mA; RBE= ∞
-100
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
-5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -3A; IB= -0.3A
-1.7
V
VBE(on)
Base-Emitter On Voltage
IC= -3A; VCE= -5V
-1.5
V
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
-30
μ A
ICEO
Collector Cutoff Current
VCE= -100V; RBE= ∞
-0.1
mA
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
-0.1
mA
hFE-1
DC Current Gain
IC= -0.5A; VCE= -5V
55
300
hFE-2
DC Current Gain
IC= -3A; VCE= -5V
15
COB
Collector Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
75
pF
fT
Current-Gain
—Bandwidth Product
IC= -0.5A; VCE= -10V
8
MHz
 h
FE-1 Classifications
C
D
E
55-110
90-180
150-300



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