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2SB683 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB683 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website: www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SB683 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= ∞ -100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -1.7 V VBE(on) Base-Emitter On Voltage IC= -4A; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -30 μ A ICEO Collector Cutoff Current VCE= -100V; RBE= ∞ -0.1 mA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -0.1 mA hFE-1 DC Current Gain IC= -1A; VCE= -5V 55 300 hFE-2 DC Current Gain IC= -4A; VCE= -5V 15 COB Collector Output Capacitance IE= 0; VCB= -10V; f= 1MHz 130 pF fT Current-Gain —Bandwidth Product IC= -0.5A; VCE= -10V 8 MHz h FE-1 Classifications C D E 55-110 90-180 150-300 |
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