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BFR35AP 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BFR35AP 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc RF Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN RF Transistor BFR35AP ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 15 V ICES Collector Cutoff Current VCE= 20V; VBE= 0 10 μ A ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 μ A IEBO Emitter Cutoff Current VEB= 2.5V; IC= 0 100 μ A hFE DC Current Gain IC= 15mA ; VCE= 8V 40 200 fT Current-Gain—Bandwidth Product IC= 15mA ; VCE= 8V; f= 500MHz 3.5 5 GHz COB Output Capacitance IE= 0 ; VCB= 10V; f= 1MHz 0.38 0.6 pF PG Power Gain IC= 15mA ; VCE= 8V; f= 900MHz 15 dB PG Power Gain IC= 15mA ; VCE= 8V; f= 1.8GHz 9.5 dB ︱ S21e︱2 Insertion Power Gain IC= 15mA ; VCE= 8V; f= 900MHz 12.5 dB ︱ S21e︱2 Insertion Power Gain IC= 15mA ; VCE= 8V; f= 1.8GHz 7 dB NF Noise Figure IC= 2mA ; VCE= 6V; f= 900MHz 1.8 dB NF Noise Figure IC= 2mA ; VCE= 6V; f= 1.8GHz 2.9 dB |
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