C945P datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

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isc Silicon NPN Transistor

2SC945

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

UNI

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 100mA ; IB= 10mA

0.15

0.3

VBE(sat)

Base-Emitter Saturation Voltage

IC= 100mA ; IB= 10 mA

0.86

1.0

VBE

Base -Emitter Voltage

IC= 1.0mA ; VCE= 6V

0.55

0.65

ICBO

Collector Cutoff Current

VCB= 60V; IE= 0

0.1

μ A

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

0.1

μ A

hFE1

DC Current Gain

IC= 0.1mA ; VCE= 6V

185

hFE2

DC Current Gain

IC= 1.0mA ; VCE= 6V

200

600

Current-Gain

—Bandwidth Product

IC= 10mA; VCE= 6V;

150

250

450

Cob

Collector-Base Capacitance

VCB=6V; IE=0; f=1.0MHz

Noise Figure

IC= 0.1mA ; VCE= 6V,f=1kHz;RG=2kΩ

0.8

 h

FE2 Classifications

90-180

135-270

200-400

300-600

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